HPD碳化硅模塊 1700V 1200V SiC模塊
產(chǎn)品描述：
Econodual模塊
AlN+AlSiC散熱，最高工作結(jié)溫175℃；
第三代模塊寄生電感低于10nH，比現(xiàn)有模塊小50%以上，降低開(kāi)關(guān)損耗。
功率密度高,適用高溫、高頻應(yīng)用，超低損耗；
集成NTC溫度傳感器，易于系統(tǒng)集成；
Product SKU | VDS | RDS(on) @25℃ | ID | Status | Data Sheet |
| ASC800N650HPD | 650V | 1.5mΩ | 800A | Product | |
| ASC400N650HPD | 650V | 3mΩ | 400A | Product | / |
| ASR1P5N1200HPD-A | 1200V | 1.3mΩ | 980A | Development | / |
| ASC800N1200HPD | 1200V | 2mΩ | 800A | Product | |
| ASC800N1200HPDF | 1200V | 2mΩ | 800A | Product | |
| ASC800N1200HPDL | 1200V | 2mΩ | 800A | Product | |
| ASC600N1200HPD | 1200V | 2.7mΩ | 600A | Product | |
| ASC600N1200HPDL | 1200V | 2.7mΩ | 600A | Product | |
| ASC400N1200HPD | 1200V | 4mΩ | 400A | Product | |
| ASC800N1700HPD | 1700V | 3.25mΩ | 800A | Product | |
| ASC400N1700HPD | 1700V | 6.5mΩ | 400A | Product | |
| ASC400N1700HPDL | 1700V | 6.5mΩ | 400A | Product |
上一個(gè)：MED碳化硅模塊 1700V 1200V 650V SiC模塊 下一個(gè)：AP3N10BI MOS管 N溝道 100V3A SOT-23 MA4
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